Unconventional resistive switching behavior in ferroelectric tunnel junctions-Reference-Cited by-同舟云学术

Unconventional resistive switching behavior in ferroelectric tunnel junctions

Published:2015 Issue:15 Volume:17 Page:10146-10150
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Mao H. J.¹²³⁴⁵,Song C.⁵¹⁶⁷⁴,Xiao L. R.¹²³⁴,Gao S.⁵¹⁶⁷⁴,Cui B.⁵¹⁶⁷⁴,Peng J. J.⁵¹⁶⁷⁴,Li F.⁵¹⁶⁷⁴,Pan F.⁵¹⁶⁷⁴

Affiliation:

1. School of Materials Science and Engineering

2. Central South University

3. Changsha 410083

4. China

5. Key Laboratory of Advanced Materials (MOE)

6. Tsinghua University

7. Beijing 100084

Abstract

An unconventional resistive switching behavior is observed in ferroelectric tunnel junctions, which builds a bridge between ferroelectric tunnel junctions and resistive random access memory devices.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CP/C5CP00421G

Reference38 articles.

1. Ferroelectric tunnel junctions for information storage and processing

2. ITRS Roadmap: Emerging Research Devices, The International Technology Roadmap for Semiconductors, 2013, http//www.itrs.net/

3. Tunneling Across a Ferroelectric

4. Giant Electroresistance in Ferroelectric Tunnel Junctions

5. Tunnel junctions with multiferroic barriers

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