Efficient defect passivation of Sb2Se3 film by tellurium doping for high performance solar cells-Reference-Cited by-同舟云学术

Efficient defect passivation of Sb2Se3 film by tellurium doping for high performance solar cells

Published:2020 Issue:14 Volume:8 Page:6510-6516
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Ma Yuyuan¹²³⁴⁵,Tang Beibei¹⁶⁷⁸³^ORCID,Lian Weitao¹²³⁴⁵,Wu Chunyan¹²³⁴⁵,Wang Xiaomin¹²³⁴⁵^ORCID,Ju Huanxin⁹³⁴¹⁰,Zhu Changfei¹²³⁴⁵,Fan Fengjia¹⁶⁷⁸³,Chen Tao¹²³⁴⁵^ORCID

Affiliation:

1. Hefei National Laboratory for Physical Sciences at the Microscale

2. Department of Materials Science and Engineering

3. University of Science and Technology of China

4. Hefei

5. P. R. China

6. Department of Modern Physics

7. CAS Key Laboratory of Microscale Magnetic Resonance

8. Synergetic Innovation Center of Quantum Information and Quantum Physics

9. National Synchrotron Radiation Laboratory

10. PR China

Abstract

Introducing tellurium fine tunes the atomic ratio of Se/Sb in Sb₂Se₃, turning it between Se-rich and Se-poor states effecting the corresponding deep defects.

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TA/D0TA00443J

Reference25 articles.

1. Quasiepitaxy Strategy for Efficient Full‐Inorganic Sb 2 S 3 Solar Cells

2. Thin-film Sb2Se3 photovoltaics with oriented one-dimensional ribbons and benign grain boundaries