Controlled growth of aligned GaN nanostructures: from nanowires and needles to micro-rods on a single substrate
Author:
Affiliation:
1. Department of Electronic Science and Technology
2. Faculty of Electronic Information and Electrical Engineering
3. Dalian University of Technology
4. Dalian 116024
5. China
Abstract
Growth of aligned GaN nanostructures by tuning the substrate distance and the growth pressure.
Funder
National Natural Science Foundation of China
New Century Excellent Talents Program
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA09813H
Reference39 articles.
1. Gallium Nitride-Based Nanowire Radial Heterostructures for Nanophotonics
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4. Nanolasers grown on silicon
5. GaAs-Based Nanoneedle Light Emitting Diode and Avalanche Photodiode Monolithically Integrated on a Silicon Substrate
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