Reduction of the ambient effect in multilayer InSe transistors and a strategy toward stable 2D-based optoelectronic applications-Reference-Cited by-同舟云学术

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Reduction of the ambient effect in multilayer InSe transistors and a strategy toward stable 2D-based optoelectronic applications

Published:2020 Issue:35 Volume:12 Page:18356-18362
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Wang Yanhao¹²³⁴,Gao Jianwei¹²³⁴,Wei Bin⁵²⁶⁴,Han Yingkuan⁵²⁶⁴,Wang Chao¹²³⁴,Gao Yakun¹²³⁴,Liu Hong⁷²⁶⁴⁸^ORCID,Han Lin¹²³⁴^ORCID,Zhang Yu¹²³⁴

Affiliation:

1. Institute of Marine Science and Technology

2. Shandong University

3. Qingdao 266237

4. China

5. School of Microelectronics

6. Jinan 250010

7. State Key Laboratory of Crystal Materials

8. Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong

Abstract

Both positive and negative photoconductivities are observed in InSe FETs for the first time, and a physical mechanism is proposed.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR04120C

Reference50 articles.

1. High-Performance Flexible Graphene Field Effect Transistors with Ion Gel Gate Dielectrics

2. Graphene transistors

3. Graphene: carbon in two dimensions

4. Native defects and substitutional impurities in two-dimensional monolayer InSe

5. Black phosphorus field-effect transistors

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