Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si-Reference-Cited by-同舟云学术

Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si

Published:2018 Issue:11 Volume:6 Page:2696-2703
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Martinez Aaron D.¹²³⁴⁵^ORCID,Miller Elisa M.¹²³^ORCID,Norman Andrew G.¹²³,Schnepf Rekha R.¹²³⁴⁵,Leick Noemi¹²³,Perkins Craig¹²³,Stradins Paul¹²³⁴⁵,Toberer Eric S.¹²³⁴⁵^ORCID,Tamboli Adele C.¹²³⁴⁵^ORCID

Affiliation:

1. National Renewable Energy Laboratory

2. Golden

3. USA

4. Department of Physics

5. Colorado School of Mines

Abstract

ZnSiP₂ is a wide band gap material lattice matched with Si, with potential for Si-based optoelectronics. Here, amorphous ZnSiP₂–Si alloys are grown with tunable composition. Films with Si-rich compositions can be crystallized into epitaxial films.

Funder

Office of Energy Efficiency and Renewable Energy

Division of Materials Research

National Renewable Energy Laboratory

National Science Foundation

Solar Energy Technologies Program

Basic Energy Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C7TC05545E

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