Growth temperature induced changes of luminescence in epitaxial BN: from colour centres to donor–acceptor recombination-Reference-Cited by-同舟云学术

Growth temperature induced changes of luminescence in epitaxial BN: from colour centres to donor–acceptor recombination

Published:2023 Issue:22 Volume:15 Page:9864-9877
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Korona K. P.¹^ORCID,Binder J.¹^ORCID,Dąbrowska A. K.¹^ORCID,Iwański J.¹^ORCID,Reszka A.²^ORCID,Korona T.³^ORCID,Tokarczyk M.¹^ORCID,Stępniewski R.¹^ORCID,Wysmołek A.¹^ORCID

Affiliation:

1. Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland

2. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

3. Faculty of Chemistry, University of Warsaw, Pasteura 1, 02-093 Warsaw, Poland

Abstract

A UV luminescence study of BN shows strong emission from theoretically predicted 1,2-CNCB and 1,4-CNCB color centers (4.1 eV and 3.24 eV). Samples grown at different temperatures reveal a change from localized to delocalized recombination.

Funder

Narodowe Centrum Nauki

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR00578J

Reference59 articles.

1. Hexagonal boron nitride is an indirect bandgap semiconductor

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