The effect of interface angle on the thermal conductivity of Si/Ge superlattices-Reference-Cited by-同舟云学术

The effect of interface angle on the thermal conductivity of Si/Ge superlattices

Published:2021 Issue:40 Volume:23 Page:23225-23232
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Liu Ying-Guang¹²^ORCID,Ren Guo-Liang¹³^ORCID,Chernatynskiy Aleksandr⁴,Zhao Xiao-Feng³

Affiliation:

1. Department of Power Engineering, School of Energy and Power Engineering, North China Electric Power University, Baoding 071003, China

2. Hebei Key Laboratory of Low Carbon and High Efficiency Power Generation Technology, North China Electric Power University, Baoding 071003, Hebei, China

3. School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China

4. Physics Department, Missouri University of Science and Technology, Rolla, MO 65409, USA

Abstract

The special interface angle arrangement induces coherent transport of phonons and significantly improves the thermal conductivity.

Funder

Natural Science Foundation of Hebei Province

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CP/D1CP03544D

Reference44 articles.

1. On the effective thermoelectric properties of layered heterogeneous medium

2. Thermal transport in SiGe superlattice thin films and nanowires: Effects of specimen and periodic lengths

3. Precise control of thermal conductivity at the nanoscale through individual phonon-scattering barriers

4. Phonon transport and thermal conductivity of diamond superlattice nanowires: a comparative study with SiGe superlattice nanowires

5. Tuning thermal conductivity of bismuth selenide nanoribbons by reversible copper intercalation

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