Surface oxygen vacancy engineering on TiO<sub>2</sub> (101) <i>via</i> ALD technology for simultaneously enhancing charge separation and transfer-Reference-Cited by-同舟云学术

Surface oxygen vacancy engineering on TiO₂ (101) via ALD technology for simultaneously enhancing charge separation and transfer

Published:2023 Issue:22 Volume:59 Page:3237-3240
ISSN:1359-7345
Container-title:Chemical Communications
language:en
Short-container-title:Chem. Commun.

Author:

Wu Wenbo¹,Peng Zhenbo²,Wang Jun¹,Li Xiaoyu¹,Deng Ping¹,Zhou Yuhu¹,Jia Gan¹,Ye Wei¹^ORCID,Gao Peng¹^ORCID

Affiliation:

1. College of Material, Chemistry and Chemical Engineering, Hangzhou Normal University, Hangzhou, Zhejiang 311121, P. R. China

2. Zhejiang Collaborative Innovation Center for High Value Utilization of Byproducts from Ethylene Project, Ningbo Polytechnic, Ningbo, Zhejiang 315800, P. R. China

Abstract

Titanium oxide molecular layers containing extensive surface oxygen vacancies have been constructed by a precise ALD technique.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Hangzhou Science and Technology Bureau

Department of Education of Zhejiang Province

Health Commission of Zhejiang Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CC/D2CC06853B

Reference25 articles.

1. Metal oxide semiconductors with highly concentrated oxygen vacancies for gas sensing materials: A review

2. Enhancing the Photoelectric Performance of Photodetectors Based on Metal Oxide Semiconductors by Charge-Carrier Engineering

3. Black titanium dioxide (TiO2) nanomaterials

4. Preparation of Visible-Light-Responsive Titanium Oxide Photocatalysts by Plasma Treatment

5. Surface Science Studies of the Photoactivation of TiO2New Photochemical Processes

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