Hydrogen-assisted step-edge nucleation of MoSe2 monolayers on sapphire substrates-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Hydrogen-assisted step-edge nucleation of MoSe2 monolayers on sapphire substrates

Published:2019 Issue:16 Volume:11 Page:7701-7709
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Hwang Yunjeong¹²³⁴,Shin Naechul¹²³⁴^ORCID

Affiliation:

1. Department of Chemical Engineering

2. Inha University

3. Incheon 22212

4. Republic of Korea

Abstract

Controlled introduction of H₂ during the CVD growth of MoSe₂ plays a vital role in the step-edge aligned nucleation on a c-sapphire (0001) substrate.

Funder

National Research Foundation of Korea

Korea Institute of Energy Technology Evaluation and Planning

Ministry of Trade, Industry and Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C8NR10315A

Reference54 articles.

1. Single-layer MoS2 transistors

2. Bifunctional Sensing Characteristics of Chemical Vapor Deposition Synthesized Atomic-Layered MoS2

3. Au-Modified Monolayer MoS2 Sensor for DNA Detection

4. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

5. Etching-free patterning method for electrical characterization of atomically thin MoSe2films grown by chemical vapor deposition

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In Situ Studies on the Influence of Surface Symmetry on the Growth of MoSe2 Monolayer on Sapphire Using Reflectance Anisotropy Spectroscopy and Differential Reflectance Spectroscopy;Nanomaterials;2024-09-07

2. Process-Induced Modulation of Domain Orientations during WS₂ Epitaxy by Metal–Organic Chemical Vapor Deposition on Sapphire;ACS Applied Electronic Materials;2024-09-04

3. High-Yield WS₂ Synthesis through Sulfurization in Custom-Modified Atmospheric Pressure Chemical Vapor Deposition Reactor, Paving the Way for Selective NH₃ Vapor Detection;ACS Applied Materials & Interfaces;2024-09-02

4. Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals;Advanced Materials;2024-08-16

5. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides;Chemical Reviews;2024-08-12

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3