Polymer bulk-heterojunction synaptic field-effect transistors with tunable decay constant-Reference-Cited by-同舟云学术

Polymer bulk-heterojunction synaptic field-effect transistors with tunable decay constant

Published:2021 Issue:14 Volume:9 Page:4854-4861
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ke Yudan¹²³⁴⁵,Yu Rengjian¹²³⁴⁵,Lan Shuqiong¹²³⁴⁵,He Lihua¹²³⁴⁵,Yan Yujie¹²³⁴⁵,Yang Huihuang¹²³⁴⁵,Shan Liuting¹²³⁴⁵,Chen Huipeng¹²³⁴⁵^ORCID,Guo Tailiang¹²³⁴⁵

Affiliation:

1. Institute of Optoelectronic Display

2. National & Local United Engineering Lab of Flat Panel Display Technology

3. Fuzhou University

4. Fuzhou 350002

5. China

Abstract

Small angle-neutron scattering was used to elucidate the current decay mechanism of synaptic field-effect transistors based on a polymer bulk p–n heterojunction.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Fujian Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC05629D

Reference43 articles.

1. Total regional and global number of synapses in the human brain neocortex

2. Spiking activity propagation in neuronal networks: reconciling different perspectives on neural coding