Cu:NiO as a hole-selective back contact to improve the photoelectrochemical performance of CuBi2O4 thin film photocathodes-Reference-Cited by-同舟云学术

Cu:NiO as a hole-selective back contact to improve the photoelectrochemical performance of CuBi2O4 thin film photocathodes

Published:2019 Issue:15 Volume:7 Page:9183-9194
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Song Angang¹²³⁴⁵^ORCID,Plate Paul¹²³⁴,Chemseddine Abdelkrim¹²³⁴,Wang Fuxian¹²³⁴,Abdi Fatwa F.¹²³⁴^ORCID,Wollgarten Markus⁶²³⁴^ORCID,van de Krol Roel¹²³⁴⁵^ORCID,Berglund Sean P.¹²³⁴^ORCID

Affiliation:

1. Institute for Solar Fuels

2. Helmholtz-Zentrum Berlin für Materialien und Energie GmbH

3. 14109 Berlin

4. Germany

5. Institute für Chemie

6. Department Nanoscale Structures and Microscopic Analysis

Abstract

Cu doped NiO (Cu:NiO) back contact layers are inserted between FTO substrates and CuBi₂O₄ thin films to improve the performance of CuBi₂O₄ photocathodes.

Funder

Bundesministerium für Bildung und Forschung

China Scholarship Council

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TA/C9TA01489F

Reference48 articles.

1. p-Type CuBi2O4: an easily accessible photocathodic material for high-efficiency water splitting