Amorphous ZnO based resistive random access memory-Reference-Cited by-同舟云学术

Amorphous ZnO based resistive random access memory

Published:2016 Issue:22 Volume:6 Page:17867-17872
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Huang Yong¹²³⁴⁵,Shen Zihan¹²³⁴⁵,Wu Ye¹²³⁴⁵,Wang Xiaoqiu⁶⁷⁸⁵,Zhang Shufang¹²³⁴⁵,Shi Xiaoqin¹²³⁴⁵,Zeng Haibo¹²³⁴⁵

Affiliation:

1. Institute of Optoelectronics & Nanomaterials

2. School of Materials Science and Engineering

3. Nanjing University of Science and Technology

4. Nanjing 210094

5. China

6. Department of Fundamental Courses

7. Jinling Institute of Technology

8. Nanjing 211169

Abstract

Amorphous zinc oxide (a-ZnO) based resistive random access memory (RRAM) Ag/a-ZnO/Pt devices were fabricated and their resistive switching characteristics investigated.

Funder

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C5RA22728C

Reference22 articles.

1. Resistive switching in transition metal oxides

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Nonvolatile Memristive Switching Characteristics of TiO$_{\bm 2}$ Films Embedded With Nickel Nanocrystals

4. Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures

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