Interaction of liquid water with the p-GaInP2(100) surface covered with submonolayer oxide-Reference-Cited by-同舟云学术

Interaction of liquid water with the p-GaInP2(100) surface covered with submonolayer oxide

Published:2018 Issue:32 Volume:20 Page:21144-21150
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Hajduk Andreas¹²³⁴^ORCID,Lebedev Mikhail V.⁵⁶⁷^ORCID,Kaiser Bernhard¹²³⁴,Jaegermann Wolfram¹²³⁴

Affiliation:

1. Darmstadt University of Technology

2. Institute of Material Science

3. 64287 Darmstadt

4. Germany

5. Ioffe Institute

6. St. Petersburg

7. Russia

Abstract

Interaction of liquid water with p-GaInP₂(100) surface causes transformation of residual gallium oxides to monohydroxides with simultaneous metallic gallium accumulation.

Funder

Russian Foundation for Basic Research

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CP/C8CP03337D

Reference39 articles.

1. On the stability of semiconductor electrodes against photodecomposition

2. A Monolithic Photovoltaic-Photoelectrochemical Device for Hydrogen Production via Water Splitting

3. Efficient direct solar-to-hydrogen conversion by in situ interface transformation of a tandem structure

4. Direct solar-to-hydrogen conversion via inverted metamorphic multi-junction semiconductor architectures

5. III−V Nitride Epilayers for Photoelectrochemical Water Splitting: GaPN and GaAsPN

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