A nanoscale vacuum field emission gated diode with an umbrella cathode-Reference-Cited by-同舟云学术

A nanoscale vacuum field emission gated diode with an umbrella cathode

Published:2021 Issue:6 Volume:3 Page:1725-1729
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Han Jin-Woo¹²³^ORCID,Seol Myeong-Lok¹²³^ORCID,Meyyappan M.¹²³^ORCID

Affiliation:

1. NASA Ames Research Center

2. Moffett Field

3. USA

Abstract

A nanoscale field emission vacuum channel gated diode with an umbrella-like cathode is fabricated. The bottom silicon plate is the gate with the anode located between the cathode and the gate, which reduces leakage current.

Funder

National Aeronautics and Space Administration

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NA/D1NA00004G

Reference16 articles.

1. Nanoscale vacuum channel transistors fabricated on silicon carbide wafers

2. Nanoscale Vacuum Channel Transistor

3. Metal–Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics

4. Suspended Nanoscale Field Emitter Devices for High-Temperature Operation

5. Vacuum field-effect transistor with a deep submicron channel fabricated by electro-forming

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