Impact of disorder on optical reflectivity contrast of epitaxial Ge2Sb2Te5 thin films-Reference-Cited by-同舟云学术

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Impact of disorder on optical reflectivity contrast of epitaxial Ge2Sb2Te5 thin films

Published:2018 Issue:26 Volume:20 Page:3688-3695
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Behrens Mario¹²³^ORCID,Lotnyk Andriy¹²³^ORCID,Roß Ulrich¹²³,Griebel Jan¹²³,Schumacher Philipp¹²³,Gerlach Jürgen W.¹²³,Rauschenbach Bernd¹²³

Affiliation:

1. Leibniz Institute of Surface Engineering (IOM)

2. 04318 Leipzig

3. Germany

Abstract

Classification of the optical reflectivity contrasts of single-phase, epitaxial Ge₂Sb₂Te₅ thin films with respect to the vacancy arrangements.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CE/C8CE00534F

Reference33 articles.

1. Phase-change materials for rewriteable data storage

2. Phase Change Materials

3. High Speed Overwritable Phase Change Optical Disk Material

4. Structures of stable and metastable Ge2Sb2Te5, an intermetallic compound in GeTe–Sb2Te3 pseudobinary systems

5. Temperature dependent resonant X-ray diffraction of single-crystalline Ge2Sb2Te5

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1. The microstructure and electrical and optical properties of Ge–Cu–Te phase-change thin films;CrystEngComm;2024

2. In situ atomic-scale observation of transformation from disordered to ordered layered structures in Ge-Sb-Te phase change memory thin films;Acta Materialia;2024-01

3. Study on Texture Formation of Sb2Te Thin Films for Phase Change Memory Applications;Crystals;2023-02-22

4. Effect of vacancy ordering on the grain growth of Ge₂Sb₂Te₅ film;Nanotechnology;2023-02-02

5. In Situ Atomic-Scale Observation of Transformation from Disordered to Ordered Layered Structures in Ge-Sb-Te Phase Change Memory Thin Films;2023

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