Chemical understanding of resistance drift suppression in Ge–Sn–Te phase-change memory materials-Reference-Cited by-同舟云学术

Chemical understanding of resistance drift suppression in Ge–Sn–Te phase-change memory materials

Published:2020 Issue:1 Volume:8 Page:71-77
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Chen Yuhan¹²³⁴⁵,Sun Liang⁶⁷⁸⁹⁵,Zhou Yuxing¹²³⁴⁵,Zewdie Getasew M.¹²³⁴⁵,Deringer Volker L.¹⁰¹¹¹²¹³^ORCID,Mazzarello Riccardo¹⁴¹⁵¹⁶¹⁷¹⁸,Zhang Wei¹²³⁴⁵^ORCID

Affiliation:

1. Center for Advancing Materials Performance from the Nanoscale

2. State Key Laboratory for Mechanical Behavior of Materials

3. Xi’an Jiaotong University

4. Xi’an 710049

5. China

6. Key Laboratory of Materials Processing Engineering

7. College of Materials Science and Engineering

8. Xi'an Shiyou University

9. Xi'an 710065

10. Department of Engineering

11. University of Cambridge

12. Cambridge CB2 1PZ

13. UK

14. Institute for Theoretical Solid-State Physics

15. JARA-FIT and JARA-HPC

16. RWTH Aachen University

17. Aachen 52056

18. Germany

Abstract

The degree of Peierls distortion and the fraction of tetrahedral units in amorphous Ge–Sn–Te phase-change memory materials are gradually reduced as the Sn content gets richer.

Funder

Jiangsu Science and Technology Department

Deutsche Forschungsgemeinschaft

National Natural Science Foundation of China

Higher Education Discipline Innovation Project

Xi’an Jiaotong University

China Scholarship Council

Isaac Newton Trust

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry