Electronic structure, doping effect and topological signature in realistic intermetallics Li3−xNaxM (x = 3, 2, 1, 0; M = N, P, As, Sb, Bi)-Reference-Cited by-同舟云学术

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Electronic structure, doping effect and topological signature in realistic intermetallics Li3−xNaxM (x = 3, 2, 1, 0; M = N, P, As, Sb, Bi)

Published:2020 Issue:10 Volume:22 Page:5847-5854
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Jin Lei¹²³⁴^ORCID,Zhang Xiaoming¹²³⁴^ORCID,He Tingli¹²³⁴^ORCID,Meng Weizhen¹²³⁴,Dai Xuefang¹²³⁴,Liu Guodong¹²³⁴^ORCID

Affiliation:

1. School of Materials Science and Engineering

2. Hebei University of Technology

3. Tianjin 300130

4. China

Abstract

Li_3−xNa_xM compounds show rich topological signatures.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hebei Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CP/C9CP06033B

Reference74 articles.

1. Colloquium: Topological insulators

2. Topological insulators and superconductors

3. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

4. Model Hamiltonian for topological insulators

5. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

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