Enhancement of memory margins in the polymer composite of [6,6]-phenyl-C61-butyric acid methyl ester and polystyrene
Author:
Affiliation:
1. HLJ Province Key Laboratories of Senior-education for Electronic Engineering
2. Heilongjiang University
3. Harbin
4. China
5. Communication and Electronics Engineering Institute
6. School of Chemistry and Materials Science
Abstract
Memory devices based on composites of polystyrene (PS) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) were investigated with bistable resistive switching behavior.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2016/CP/C6CP06084F
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