Metal oxide resistive memory with a deterministic conduction path-Reference-Cited by-同舟云学术

Metal oxide resistive memory with a deterministic conduction path

Published:2020 Issue:11 Volume:8 Page:3897-3903
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lee Sunghwan¹²³⁴,Seo Shem¹²³⁴,Lim Jinho¹²³⁴,Jeon Dasom¹²³⁴,Alimkhanuly Batyrbek¹²³⁴,Kadyrov Arman¹²³⁴,Lee Seunghyun¹²³⁴^ORCID

Affiliation:

1. Department of Electronic Engineering

2. Kyunghee University

3. Yongin-si

4. Republic of Korea

Abstract

In this study, a Ge–Sb–Te ternary chalcogenide layer that functions as a conductive lead is added to a HfO₂-based RRAM layer to improve the memory switching reproducibility and reduce HRS/LRS variations.

Funder

Korea Evaluation Institute of Industrial Technology

Ministry of Education

Ministry of Trade, Industry and Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC07001J

Reference50 articles.

1. Memory leads the way to better computing

2. Metal–Oxide RRAM

3. Nanoionics-based resistive switching memories

4. Metal oxide-resistive memory using graphene-edge electrodes

5. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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