Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core

Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core–shell nanorods

Published:2019 Issue:1 Volume:11 Page:193-199
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Robin Y.¹²³⁴²^ORCID,Evropeitsev E. A.⁵⁶⁷,Shubina T. V.⁵⁶⁷,Kirilenko D. A.⁵⁶⁷,Davydov V. Yu.⁵⁶⁷,Smirnov A. N.⁵⁶⁷,Toropov A. A.⁵⁶⁷,Eliseyev I. A.⁵⁶⁷^ORCID,Bae S. Y.¹²³⁸⁹,Kushimoto M.¹⁰²³,Nitta S.¹²³,Ivanov S. V.⁵⁶⁷,Amano H.¹²³⁴²

Affiliation:

1. Institute of Materials and Systems for Sustainability (IMaSS)

2. Nagoya University

3. Japan

4. Center for Integrated Research of Future Electronics (CIRFE)

5. Ioffe Institute

6. 194021 St. Petersburg

7. Russia

8. Korea Institute of Ceramic Engineering and Technology

9. Jinju

10. Department of Electrical Engineering and Computer Science

Abstract

Transient photoluminescence (PL) characteristics and localization phenomena in InGaN/GaN core–shell nanorods (NRs) were investigated from 6 K up to 285 K.

Funder

Japan Society for the Promotion of Science

Russian Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C8NR05863F

Reference36 articles.

1. The nanorod approach: GaN NanoLEDs for solid state lighting

2. Group III nitride core-shell nano- and microrods for optoelectronic applications