Atomistic simulation of the growth of defect-free carbon nanotubes-Reference-Cited by-同舟云学术

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Atomistic simulation of the growth of defect-free carbon nanotubes

Published:2015 Issue:8 Volume:6 Page:4704-4711
ISSN:2041-6520
Container-title:Chemical Science
language:en
Short-container-title:Chem. Sci.

Author:

Xu Ziwei¹²³,Yan Tianying⁴⁵⁶⁷³,Ding Feng¹²³

Affiliation:

1. Institute of Textiles and Clothing

2. Hong Kong Polytechnic University

3. The People's Republic of China

4. Institute of New Energy Material Chemistry

5. Collaborative Innovation Center of Chemical Science and Engineering (Tianjin)

6. Nankai University

7. Tianjin 300071

Abstract

The atomistic simulation of defect-free SWCNT growth is realized for the first time after 12 years of continuous effort.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/SC/C5SC00938C

Reference79 articles.

1. Strength and Breaking Mechanism of Multiwalled Carbon Nanotubes Under Tensile Load

2. Tensile Loading of Ropes of Single Wall Carbon Nanotubes and their Mechanical Properties

3. Logic Circuits with Carbon Nanotube Transistors

4. Single- and multi-wall carbon nanotube field-effect transistors

5. Room-temperature transistor based on a single carbon nanotube

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