Band structure engineering in Sn1.03Te through an In-induced resonant level-Reference-Cited by-同舟云学术

Band structure engineering in Sn1.03Te through an In-induced resonant level

Published:2020 Issue:3 Volume:8 Page:977-988
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Misra Shantanu¹²³⁴^ORCID,Wiendlocha Bartlomiej⁵⁶⁷⁸^ORCID,Tobola Janusz⁵⁶⁷⁸^ORCID,Fesquet Florian¹²³⁴,Dauscher Anne¹²³⁴^ORCID,Lenoir Bertrand¹²³⁴^ORCID,Candolfi Christophe¹²³⁴^ORCID

Affiliation:

1. Institut Jean Lamour

2. UMR 7198 CNRS – Université de Lorraine

3. 54011 Nancy Cedex

4. France

5. Faculty of Physics and Applied Computer Science

6. AGH University of Science and Technology

7. 30-059 Krakow

8. Poland

Abstract

In substitution in Sn_1.03Te forms a resonant level that strongly affects the thermoelectric properties at high temperatures.

Funder

Ministerstwo Nauki i Szkolnictwa Wyższego

Narodowe Centrum Nauki

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC04407H

Reference74 articles.

1. H. J. Goldsmid , Thermoelectric Refrigeration , Springer , New York , 1964

2. Thermoelectrics and its Energy Harvesting , ed. D. M.Rowe , CRC Press , 2012

3. Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States

4. The best thermoelectric.

5. Resonant levels in bulk thermoelectric semiconductors

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