[Ge(TenBu)4] – a single source precursor for the chemical vapour deposition of germanium telluride thin films-Reference-Cited by-同舟云学术

[Ge(TenBu)4] – a single source precursor for the chemical vapour deposition of germanium telluride thin films

Published:2019 Issue:1 Volume:48 Page:117-124
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Hawken Samantha L.¹²³⁴,Huang Ruomeng⁵²³⁴^ORCID,de Groot C. H. (Kees)⁵²³⁴^ORCID,Hector Andrew L.¹²³⁴^ORCID,Jura Marek⁶⁷⁸⁹⁴,Levason William¹²³⁴^ORCID,Reid Gillian¹²³⁴^ORCID,Stenning Gavin B. G.⁶⁷⁸⁹⁴

Affiliation:

1. School of Chemistry

2. University of Southampton

3. Southampton SO17 1BJ

4. UK

5. School of Electronics and Computer Science

6. ISIS Neutron and Muon Source

7. Rutherford Appleton Laboratory

8. Harwell Science and Innovation Campus

9. Didcot

Abstract

Reaction of activated germanium with ⁿBu₂Te₂ in THF solution was shown to be more effective for the preparation of the germanium(iv) tellurolate compound, [Ge(TeⁿBu)₄], than reaction of GeCl₄ with LiTeⁿBu in THF.

Funder

Science and Technology Facilities Council

Engineering and Physical Sciences Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/DT/C8DT03263G

Reference56 articles.

1. GeTe: a simple compound blessed with a plethora of properties

2. Materials for thermoelectric energy conversion