Evolution of lateral V-defects on InGaN/GaN on Si(111) during PAMBE: the role of strain on defect kinetics-Reference-Cited by-同舟云学术

Evolution of lateral V-defects on InGaN/GaN on Si(111) during PAMBE: the role of strain on defect kinetics

Published:2018 Issue:29 Volume:20 Page:4151-4163
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Bag Ankush¹²³⁴⁵^ORCID,Das Subhashis¹²³⁴⁵^ORCID,Kumar Rahul⁶⁷⁸⁹⁴,Biswas Dhrubes⁴⁵³¹⁰⁵

Affiliation:

1. School of Computing and Electrical Engineering

2. Indian Institute of Technology Mandi

3. India

4. Advanced Technology Development Centre

5. Indian Institute of Technology Kharagpur

6. Department of Physics

7. University of Arkansas

8. Fayetteville

9. USA

10. Department of Electronics and Electrical Communication Engineering

Abstract

In this article, a unique correlation has been established between the defect kinetics of III-nitride adatoms and strain during plasma assisted molecular beam epitaxial (PAMBE) growth of InGaN/GaN heterostructures on silicon(111) for the first time.

Funder

Department of Science and Technology, Ministry of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CE/C8CE00577J

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