Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires-Reference-Cited by-同舟云学术

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Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires

Published:2017 Issue:35 Volume:9 Page:13014-13024
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Zhen¹²³⁴^ORCID,Xu Enzhi¹²³⁴,Losovyj Yaroslav⁵²³⁴,Li Nan⁶⁷⁸⁴,Chen Aiping⁶⁷⁸⁴,Swartzentruber Brian⁶⁹¹⁰⁴,Sinitsyn Nikolai¹¹⁷⁸⁴,Yoo Jinkyoung⁶⁷⁸⁴^ORCID,Jia Quanxi⁶⁷⁸⁴¹²,Zhang Shixiong¹²³⁴^ORCID

Affiliation:

1. Department of Physics

2. Indiana University

3. Bloomington

4. USA

5. Department of Chemistry

6. Center for Integrated Nanotechnologies

7. Los Alamos National Laboratory

8. Los Alamos

9. Sandia National Laboratories

10. Albuquerque

11. Theoretical Division

12. Department of Materials Design and Innovation

Abstract

The In-doped SnTe nanowire surface is composed of In₂O₃, SnO₂, Te and TeO₂which can be readily removed by argon ion sputtering.

Funder

U.S. Department of Energy

Los Alamos National Laboratory

Division of Materials Research

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR04934J

Reference76 articles.

1. High thermoelectric performance by resonant dopant indium in nanostructured SnTe

2. High Thermoelectric Performance of p-Type SnTe via a Synergistic Band Engineering and Nanostructuring Approach

3. Optimization of thermoelectric efficiency in SnTe: the case for the light band

4. Lead-free thermoelectrics: promising thermoelectric performance in p-type SnTe1−xSex system

5. Extraordinary role of Hg in enhancing the thermoelectric performance of p-type SnTe

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