Electronic and optical properties of oxygen vacancies in amorphous Ta2O5from first principles-Reference-Cited by-同舟云学术

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Electronic and optical properties of oxygen vacancies in amorphous Ta2O5from first principles

Published:2017 Issue:3 Volume:9 Page:1120-1127
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Lee Jihang,Lu Wei D.,Kioupakis Emmanouil

Funder

Office of Science

Air Force Office of Scientific Research

Division of Materials Research

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NR/C6NR07892C

Reference36 articles.

1. Alternative dielectrics to silicon dioxide for memory and logic devices

2. Thermal noise in interferometric gravitational wave detectors due to dielectric optical coatings

3. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

4. Experimental Demonstration of a Second-Order Memristor and Its Ability to Biorealistically Implement Synaptic Plasticity

5. Defect dominated charge transport in amorphous Ta2O5 thin films

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4. Effect of oxygen vacancy and Si doping on the electrical properties of Ta2O5 in memristor characteristics;Scientific Reports;2023-10-03

5. Innovative electrochemical synthesis of highly defective Ta2O5/Cu2O nanotubes inactivating bacteria under low-intensity solar irradiation;Chemical Engineering Journal;2023-07

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