Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memory-Reference-Cited by-同舟云学术

Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memory

Published:2015 Issue:14 Volume:17 Page:8627-8632
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Qin Shengjun¹²³⁴,Liu Zhan¹²³⁴,Zhang Guo¹²³⁴,Zhang Jinyu¹²³⁴,Sun Yaping¹²³⁴,Wu Huaqiang¹²³⁴,Qian He¹²³⁴,Yu Zhiping¹²³⁴

Affiliation:

1. Institute of Microelectronics

2. Tsinghua University

3. Beijing

4. China

Abstract

The growth dynamics for metallic filaments in conductive-bridge resistive-switching random access memory (CBRAM) are studied using the kinetic Monte Carlo (KMC) method.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CP/C4CP04903A

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