Polarization-dependent hole generation in 222 nm-band AlGaN-based Far-UVC LED: a way forward to the epi-growers of MBE and MOCVD-Reference-Cited by-同舟云学术

Polarization-dependent hole generation in 222 nm-band AlGaN-based Far-UVC LED: a way forward to the epi-growers of MBE and MOCVD

Published:2021 Issue:46 Volume:9 Page:16545-16557
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Malik Shahzeb¹,Usman Muhammad¹^ORCID,Khan M. Ajmal²³^ORCID,Hirayama Hideki²

Affiliation:

1. Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23460, Khyber Pakhtunkhwa, Pakistan

2. RIKEN Cluster for Pioneering Research (CPR), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

3. Farmroid Co., Ltd, 3-22-4 Funado, Itabashi-ku, Tokyo, 174-0041, Japan

Abstract

AGaN-based 222 nm-band Far-ultraviolet-C (Far-UVC) light-emitting-diodes (LEDs) offer a promising technology for the disinfection of surface, air, water, food and airborne disease transmission in occupied spaces, including COVID-19 (SARS-CoV-2) and other viral diseases, when it is meticulously designed, engineered, and applied.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC03774A

Reference32 articles.

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3. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

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