Influence of hydrogen and oxygen on the structure and properties of sputtered magnesium zirconium oxynitride thin films-Reference-Cited by-同舟云学术

Influence of hydrogen and oxygen on the structure and properties of sputtered magnesium zirconium oxynitride thin films

Published:2020 Issue:18 Volume:8 Page:9364-9372
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Kim Jekyung¹²³⁴⁵,Bauers Sage R.¹²³⁴^ORCID,Khan Imran S.¹²³⁴^ORCID,Perkins John¹²³⁴,Park Bo-In⁵⁶⁷⁸^ORCID,Talley Kevin R.¹²³⁴⁹,Kim Daehan⁵⁶⁷⁸,Zakutayev Andriy¹²³⁴^ORCID,Shin Byungha⁵⁶⁷⁸^ORCID

Affiliation:

1. Materials Science Center

2. National Renewable Energy Laboratory

3. Golden

4. USA

5. Department of Materials Science and Engineering

6. Korea Advanced Institute of Science and Technology

7. Daejeon

8. South Korea

9. Department of Metallurgical and Materials Engineering

Abstract

Nitride materials with mixed ionic and covalent bonding character and resulting good charge transport properties are attractive for optoelectronic devices.

Funder

National Renewable Energy Laboratory

Office of Science

Korea Institute of Energy Technology Evaluation and Planning

Ministry of Trade, Industry and Energy

National Research Foundation of Korea

Ministry of Education, Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TA/D0TA00654H

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3. Reactively sputtered TiN as a diffusion barrier between Cu and Si

4. Comparative study of tantalum and tantalum nitrides (Ta2N and TaN) as a diffusion barrier for Cu metallization

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