Stabilization of wide band-gap p-type wurtzite MnTe thin films on amorphous substrates
Author:
Affiliation:
1. National Renewable Energy Laboratory
2. Golden
3. USA
4. EMPA – Swiss Federal Laboratories for Materials Science and Technology
5. 8600 Dübendorf
6. Fudan University
7. Shanghai 200433
8. Colorado School of Mines
Abstract
The wurtzite polymorph of MnTe with a wider band gap and moderate p-type doping is stabilized on an amorphous indium zinc oxide substrate.
Funder
Office of Science
Science and Technology Commission of Shanghai Municipality
National Natural Science Foundation of China
China Scholarship Council
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC01828F
Reference32 articles.
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2. J. Wang and M.Isshiki , Wide-Bandgap II–VI Semiconductors: Growth and Properties , in Springer Handbook of Electronic and Photonic Materials , ed. S. Kasap and P. Capper , Springer US , Boston, MA , 2007 , pp. 325–342
3. High Pressure - High Temperature Diffraction Study of MnTe Using Synchrotron Radiation
4. Pressure-induced phase transitions of MnTe
5. X-ray photoelectron spectra of zinc-blende MnTe
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