Two- and four-probe field-effect and Hall mobilities in transition metal dichalcogenide field-effect transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Two- and four-probe field-effect and Hall mobilities in transition metal dichalcogenide field-effect transistors

Published:2016 Issue:65 Volume:6 Page:60787-60793
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Nazir Ghazanfar¹²³⁴,Khan Muhammad Farooq¹²³⁴,Iermolenko Volodymyr M.¹²³⁴,Eom Jonghwa¹²³⁴

Affiliation:

1. Department of Physics & Astronomy and Graphene Research Institute

2. Sejong University

3. Seoul 05006

4. Korea

Abstract

We have fabricated WS₂ and MoS₂ multilayer field-effect transistors to compare two-probe and four-probe field-effect and Hall mobility measurements.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA14638D

Reference37 articles.

1. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

2. Orbital analysis of electronic structure and phonon dispersion in MoS2, MoSe2, WS2, and WSe2monolayers under strain

3. Observation of monolayer valence band spin-orbit effect and induced quantum well states in MoX2

4. Spin-Orbit Splitting in Single-LayerMoS2Revealed by Triply Resonant Raman Scattering

5. Probing Spin–Orbit Coupling and Interlayer Coupling in Atomically Thin Molybdenum Disulfide Using Hydrostatic Pressure

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tunable Electron Transport in Defect-Engineered PdSe₂;Chemistry of Materials;2023-06-25

2. Forming Hexagonal and Triangular Ultrathin WS<sub>2</sub> Shapes by Controlling the Flow of Vapor;Defect and Diffusion Forum;2022-12-22

3. Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe2 van der Waals Heterostructures for Excellent Photodetector and NO2 Gas Sensing Applications;Nanomaterials;2022-10-22

4. Wafer-Scale Synthesis of WS2 Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition;Research;2021-12-06

5. High field-effect performance and intrinsic scattering in the two-dimensional MoS2 semiconductors;Applied Surface Science;2021-10

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3