Cross-linked poly(hydroxy imide) gate-insulating materials for low-temperature processing of organic thin-film transistors-Reference-Cited by-同舟云学术

Cross-linked poly(hydroxy imide) gate-insulating materials for low-temperature processing of organic thin-film transistors

Published:2018 Issue:48 Volume:6 Page:13359-13366
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Joo-Young¹²³⁴⁵^ORCID,Kim Ji Whan¹²³⁴⁵^ORCID,Lee Eun Kyung¹²³⁴⁵^ORCID,Park Jeong-Il¹²³⁴⁵,Lee Bang-Lin¹²³⁴⁵,Kwon Young-Nam⁶²³⁴⁵,Byun Sunjung⁶²³⁴⁵,Jung Myung-Sup⁷⁸⁵,Kim Jang-Joo⁹¹⁰¹¹⁵^ORCID

Affiliation:

1. Material Research Center

2. SAIT

3. Samsung Electronics

4. Suwon

5. Republic of Korea

6. Platform Technology Lab

7. INNOX Corporation R&D Center

8. Asan

9. Department of Materials Science and Engineering

10. Seoul National University

11. Seoul 08826

Abstract

This paper reports a polymeric gate insulating material of poly(hydroxy imide) cured at the low temperature of 130 °C for the application to organic thin-film transistors on plastic substrates exhibiting high breakdown voltage and no hysteresis.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC02634C

Reference37 articles.

1. Organic Thin Film Transistors for Large Area Electronics

2. High-Performance Organic Field-Effect Transistors

3. Organic thin-film transistors

4. Organic Thin Film Transistors: Structures, Models, Materials, Fabrication, and Applications: A Review

5. Semiconducting Thienothiophene Copolymers: Design, Synthesis, Morphology, and Performance in Thin-Film Organic Transistors

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