Growth mechanism of helical γ-Dy2S3 single crystals-Reference-Cited by-同舟云学术

Growth mechanism of helical γ-Dy2S3 single crystals

Published:2021 Issue:11 Volume:23 Page:2196-2201
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Nikolaev R. E.¹²³^ORCID,Sulyaeva V. S.¹²³^ORCID,Alekseev A. V.¹²³,Sukhikh A. S.¹²³,Polyakova E. V.¹²³^ORCID,Pomelova T. A.¹²³^ORCID,Kuzuya T.⁴⁵⁶⁷,Hirai S.⁴⁵⁶⁷,Tran Nhu B.⁴⁵⁶⁷

Affiliation:

1. Nikolaev Institute of Inorganic Chemistry SB RAS

2. Novosibirsk 630090

3. Russia

4. Department of Materials Science and Engineering

5. Muroran Institute of Technology

6. Muroran 050-8585

7. Japan

Abstract

The nonequilibrium evaporation of a high-temperature SnS + Dy₂S₃ solution leads to the implementation of a VLS-like mechanism of growth of γ-Dy₂S₃ helical single crystals.

Funder

Ministry of Education and Science of the Russian Federation

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CE/D0CE01750G

Reference34 articles.

1. A comprehensive review of ZnO materials and devices

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3. III–V semiconductor nanowires for optoelectronic device applications

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5. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

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