Chloride-assisted synthesis of tellurene directly on SiO<sub>2</sub>/Si substrates: growth mechanism, thermal properties, and device applications-Reference-Cited by-同舟云学术

Chloride-assisted synthesis of tellurene directly on SiO₂/Si substrates: growth mechanism, thermal properties, and device applications

Published:2023 Issue:8 Volume:4 Page:2008-2016
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Chan Yi-Hsun¹,Lin Che-Yi²,Chou Yu-Chang¹,Chang Alice Chinghsuan³^ORCID,Lin Yen-Fu²⁴⁵⁶,Chen Yu-Ze¹⁷^ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Cheng Kung University, Tainan City, 70101, Taiwan

2. Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan

3. Center for Measurement Standards, Industrial Technology Research Institute, Hsinchu, 30011, Taiwan

4. Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan

5. Institute of Nanoscience, National Chung Hsing University, Taichung 40227, Taiwan

6. i-Center for Advanced Science and Technology (i-CAST), National Chung Hsing University, Taichung 40227, Taiwan

7. Program on Key Materials, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, Tainan City, 70101, Taiwan

Abstract

The tellurene flakes display outstanding structure stability over 30 days under ambient exposure and reveal the abnormal thermal conductance across grain boundary by exploiting SThM.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2023/MA/D3MA00038A

Reference55 articles.

1. Graphene based catalysts

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4. Ultrafast Graphene Growth on Insulators via Metal-Catalyzed Crystallization by a Laser Irradiation Process: From Laser Selection, Thickness Control to Direct Patterned Graphene Utilizing Controlled Layer Segregation Process

5. Self-Encapsulated Doping of n-Type Graphene Transistors with Extended Air Stability

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