A silicon-based PbSe quantum dot near-infrared photodetector with spectral selectivity-Reference-Cited by-同舟云学术

A silicon-based PbSe quantum dot near-infrared photodetector with spectral selectivity

Published:2021 Issue: Volume: Page:
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Shi Yuanlin¹^ORCID,Wu Zhiming²^ORCID,Dong Xiang²,Chen Pengyu¹,Wang Jinquan¹,Yang Jun¹,Xiang Zihao¹^ORCID,Shen Miao¹,Zhuang Yaming³,Gou Jun²^ORCID,Wang Jun²,Jiang Yadong²

Affiliation:

1. School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China

2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China

3. Southwest Institute of Technical Physics, Chengdu 610041, P.R. China

Abstract

A silicon-based photodetector with a selective response range is achieved by utilizing the tunable absorption peaks of colloidal quantum dots without additional complex optical structures.

Funder

Science Fund for Creative Research Groups

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR02037D

Reference38 articles.

1. Photodetectors based on graphene, other two-dimensional materials and hybrid systems

2. High gain-bandwidth-product silicon heterointerface photodetector