Tuning the electronic properties of transition-metal trichalcogenides via tensile strain-Reference-Cited by-同舟云学术

Tuning the electronic properties of transition-metal trichalcogenides via tensile strain

Published:2015 Issue:37 Volume:7 Page:15385-15391
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Ming¹²³⁴⁵,Dai Jun⁴⁵⁶,Zeng Xiao Cheng⁴⁵⁶

Affiliation:

1. College of Chemical engineering

2. North China University of Science and Technology

3. Tang shan, China

4. Department of Chemistry and Department Mechanics and Materials Engineering

5. University of Nebraska-Lincoln

6. Lincoln, USA

Abstract

A comprehensive study of the effect of tensile strain (ε = 0% to 8%) on the electronic structures of two-dimensional (2D) transition-metal trichalcogenide (TMTC) monolayers MX₃ (M = Ti, Zr, Hf, Nb; X = S, Se Te) is performed on the basis of density functional theory (DFT) computation.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR04505C

Reference59 articles.

1. Emerging Photoluminescence in Monolayer MoS2

2. Single-layer MoS2 transistors

3. How Good Can Monolayer MoS2 Transistors Be?

4. Integrated Circuits and Logic Operations Based on Single-Layer MoS2

5. Evidence of the Existence of Magnetism in Pristine VX2 Monolayers (X = S, Se) and Their Strain-Induced Tunable Magnetic Properties

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