Over 800% efficiency enhancement of all-inorganic quantum-dot light emitting diodes with an ultrathin alumina passivating layer-Reference-Cited by-同舟云学术

Over 800% efficiency enhancement of all-inorganic quantum-dot light emitting diodes with an ultrathin alumina passivating layer

Published:2018 Issue:23 Volume:10 Page:11103-11109
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Ji Wenyu¹²³⁴⁵^ORCID,Shen Huaibin⁶⁷⁸⁵^ORCID,Zhang Han¹²³⁴⁵,Kang Zhihui¹²³⁴⁵,Zhang Hanzhuang¹²³⁴⁵

Affiliation:

1. Key Lab of Physics and Technology for Advanced Batteries (Ministry of Education)

2. Department of Physics

3. Jilin University

4. Changchun

5. China

6. Key Laboratory for Special Functional Materials of Ministry of Education

7. Henan University

8. Kaifeng 475004

Abstract

The interactions between QDs and s-NiO can be largely suppressed through introducing a ultrathin Al₂O₃passivating layer. This highest current efficiency (external quantum efficiency) of 34.1 cd A⁻¹(8.1%) is achieved.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR01460D

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