Sensitive field-effect transistor sensors with atomically thin black phosphorus nanosheets
Author:
Affiliation:
1. Department of Mechanical Engineering
2. University of Wisconsin-Milwaukee
3. Milwaukee
4. USA
Abstract
Atomically thin black phosphorus (BP) field-effect transistors have excellent potential for sensing applications.
Funder
Directorate for Engineering
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2020/NR/C9NR09354K
Reference48 articles.
1. Monolithically Integrated Flexible Black Phosphorus Complementary Inverter Circuits
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4. Air-Stable Black Phosphorus Devices for Ion Sensing
5. Impedimetric phosphorene field-effect transistors for rapid detection of lead ions
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