Comprehensive understanding of the structure-stacking property correlation to achieve high-performance ternary data-storage devices-Reference-Cited by-同舟云学术

Comprehensive understanding of the structure-stacking property correlation to achieve high-performance ternary data-storage devices

Published:2021 Issue:7 Volume:5 Page:3176-3183
ISSN:2052-1537
Container-title:Materials Chemistry Frontiers
language:en
Short-container-title:Mater. Chem. Front.

Author:

Zhang Qi-jian¹²³⁴^ORCID,Cao Huan⁵⁶⁷⁸⁴,Shen Jun-yu¹²³⁴,Li Yang⁹¹⁰¹¹⁸¹²^ORCID,Lu Jian-mei⁵⁶⁷⁸⁴^ORCID

Affiliation:

1. School of Materials Engineering

2. Changshu Institute of Technology

3. Changshu

4. P. R. China

5. College of Chemistry

6. Chemical Engineering and Materials Science

7. Soochow University

8. Suzhou

9. Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application

10. School of Physical Science and Technology

11. Suzhou University of Science and Technology

12. China

Abstract

Two small-molecule isomers with consistent functional units exhibit total different molecular stacking modes, rendering the memory behaviours from traditional binary memory to typical ternary memory.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Major Basic Research Project of the Natural Science Foundation of the Jiangsu Higher Education Institutions

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/QM/D1QM00100K

Reference47 articles.

1. A Small-Molecule-Based Ternary Data-Storage Device

2. Tuning of electron density distribution on molecular conjugated skeleton to improve intermolecular aggregation style and device memory performance

3. High Crystalline Dithienosilole-Cored Small Molecule Semiconductor for Ambipolar Transistor and Nonvolatile Memory

4. Synthesis and Nonvolatile Memory Behaviors of Dioxatetraazapentacene Derivatives

5. Photophysical, electrochemical and flexible organic resistive switching memory device application of a small molecule: 7,7-bis(hydroxyethylpiperazino) dicyanoquinodimethane

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of terminal substituent of iso‐indigo‐based materials on the intermolecular stacking and memory performance;Chemistry – An Asian Journal;2024-02-09

2. A Conjugated Polymer Bearing Perylenediimide (PDI) and Ferrocene (Fc) Exhibiting Stable Data‐Storage Performance;Advanced Functional Materials;2023-09-15

3. Molecular-Shape-Controlled Binary to Ternary Resistive Random-Access Memory Switching of N-Containing Heteroaromatic Semiconductors;ACS Applied Materials & Interfaces;2022-09-21

4. Variable Learning‐Memory Behavior from π‐Conjugated Ligand to Ligand‐Containing Cobalt( II ) Complex ^†;Chinese Journal of Chemistry;2022-07-26

5. Flexible and recyclable bio-based transient resistive memory enabled by self-healing polyimine membrane;Journal of Colloid and Interface Science;2022-02