Stability and fundamental properties of CuxO1−x as optoelectronic functional materials-Reference-Cited by-同舟云学术

Stability and fundamental properties of Cu_xO_1−x as optoelectronic functional materials

Published:2022 Issue:6 Volume:12 Page:3755-3762
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Fan Wei-Tao¹²,Zhao Zong-Yan³^ORCID,Shen Hong-Lie¹

Affiliation:

1. College of Materials Science and Technology, Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, P. R. China

2. Ycergy (Suzhou) Technology Co. Ltd, Suzhou 215121, P. R. China

3. Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China

Abstract

The temperature and oxygen partial pressure leads binary CuxO1−x compounds to have different stoichiometric ratios, resulting in different fundamental physical properties for optoelectronic functional applications.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D1RA09068B

Reference26 articles.

1. Development of plasmonic semiconductor nanomaterials with copper chalcogenides for a future with sustainable energy materials

2. Energetic I–III–VI2and I2–II–IV–VI4nanocrystals: synthesis, photovoltaic and thermoelectric applications

3. Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency

4. Electronic structure of antifluorite Cu2X (X = S, Se, Te) within the modified Becke-Johnson potential plus an on-site Coulomb U

5. Highly enhanced p-type electrical conduction in wide band gap Cu1+xAl1−xS2 polycrystals

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