Revealing the relationship between photoelectrochemical performance and interface hole trapping in CuBi2O4 heterojunction photoelectrodes-Reference-Cited by-同舟云学术

Revealing the relationship between photoelectrochemical performance and interface hole trapping in CuBi2O4 heterojunction photoelectrodes

Published:2020 Issue:41 Volume:11 Page:11195-11204
ISSN:2041-6520
Container-title:Chemical Science
language:en
Short-container-title:Chem. Sci.

Author:

Song Angang¹²³⁴⁵^ORCID,Levine Igal⁶²⁷⁴^ORCID,van de Krol Roel¹²³⁴⁵^ORCID,Dittrich Thomas⁶²⁷⁴^ORCID,Berglund Sean P.¹²³⁴^ORCID

Affiliation:

1. Institute for Solar Fuels

2. Helmholtz-Zentrum Berlin für Materialien und Energie GmbH

3. 14109 Berlin

4. Germany

5. Institut für Chemie

6. Institute for Silicon Photovoltaics

7. 12489 Berlin

Abstract

CdS, BiVO₄, and Ga₂O₃ buffer layers were tested between CuBi₂O₄ and TiO₂ in heterojunction photoelectrodes. Photoelectrochemical analysis and modulated surface photovoltage spectroscopy revealed that interface hole traps impacted device performance.

Funder

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/SC/D0SC03030A

Reference42 articles.

1. Comprehensive Evaluation of CuBi2O4 as a Photocathode Material for Photoelectrochemical Water Splitting

2. Photoelectrochemical Properties and Photostabilities of High Surface Area CuBi2O4 and Ag-Doped CuBi2O4 Photocathodes

3. Low temperature grown CuBi2O4 with flower morphology and its composite with CuO nanosheets for photoelectrochemical water splitting