Sulfurization engineering of single-zone CVD vertical and horizontal MoS<sub>2</sub> on p-GaN heterostructures for self-powered UV photodetectors-Reference-Cited by-同舟云学术

Sulfurization engineering of single-zone CVD vertical and horizontal MoS₂ on p-GaN heterostructures for self-powered UV photodetectors

Published:2023 Issue:3 Volume:5 Page:879-892
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Zulkifli Nur 'Adnin Akmar¹,Zahir Nor Hilmi²,Abdullah Ripain Atiena Husna¹^ORCID,Said Suhana Mohd³^ORCID,Zakaria Rozalina¹^ORCID

Affiliation:

1. Photonic Research Centre, University Malaya, 50603 Kuala Lumpur, Malaysia

2. Low Dimensional Material Research Center (LDMRC), Physics Dept. Faculty of Science, University Malaya, 50603 Kuala Lumpur, Malaysia

3. Department of Electrical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia

Abstract

Schematic diagram of the n-MoS2/p-GaN heterojunction photodetector fabricated and light intensity-dependent of responsivity and specific detectivity of the 30 minutes device.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NA/D2NA00756H

Reference63 articles.

1. The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory

2. Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

3. High-Gain Phototransistors Based on a CVD MoS2Monolayer

4. Fundamentals of lateral and vertical heterojunctions of atomically thin materials

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