Novel chemical route for atomic layer deposition of MoS2 thin film on SiO2/Si substrate-Reference-Cited by-同舟云学术

Novel chemical route for atomic layer deposition of MoS2 thin film on SiO2/Si substrate

Published:2014 Issue:23 Volume:6 Page:14453-14458
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Jin Zhenyu¹²³,Shin Seokhee¹²³,Kwon Do Hyun¹²³,Han Seung-Joo¹²³,Min Yo-Sep¹²³

Affiliation:

1. Department of Chemical Engineering

2. Konkuk University

3. Seoul 143-701, Korea

Abstract

An amorphous MoS₂ thin film is grown at 100 °C on SiO₂/Si by atomic layer deposition using molybdenum hexacarbonyl and dimethyldisulfide. The as-grown film is crystallized with (002) basal planes in a direction parallel to the substrate.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C4NR04816D

Reference47 articles.

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