Does interfacial exciton quenching exist in high-performance quantum dot light-emitting diodes?-Reference-Cited by-同舟云学术

Does interfacial exciton quenching exist in high-performance quantum dot light-emitting diodes?

Published:2023 Issue:7 Volume:15 Page:3430-3437
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Qu Xiangwei¹²,Liu Wenbo¹²,Li Depeng¹²,Ma Jingrui¹²,Gu Mi¹²,Jia Siqi¹²,Xiang Guohong¹²,Sun Xiao Wei¹²^ORCID

Affiliation:

1. Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen 518055, China

2. Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Shenzhen 518055, China

Abstract

Exciton quenching at the QD–ETL interface is unintentionally avoided, which bridges interfacial exciton quenching and high performance in a quantum dot light-emitting diode.

Funder

Special Project for Research and Development in Key areas of Guangdong Province

Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR07119C

Reference25 articles.

1. Solution-processed, high-performance light-emitting diodes based on quantum dots