Vertically stacked Bi2Se3/MoTe2 heterostructure with large band offsets for nanoelectronics-Reference-Cited by-同舟云学术

Vertically stacked Bi2Se3/MoTe2 heterostructure with large band offsets for nanoelectronics

Published:2021 Issue:36 Volume:13 Page:15403-15414
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Tao Lin¹²,Yao Bin¹²,Yue Qian³,Dan Zhiying³,Wen Peiting³,Yang Mengmeng⁴,Zheng Zhaoqiang⁴^ORCID,Luo Dongxiang³,Fan Weijun⁵^ORCID,Wang Xiaozhou³,Gao Wei³^ORCID

Affiliation:

1. State Key Lab of Superhard Material, and College of Physics, Jilin University, Changchun 130012, P. R. China

2. Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun, 130012, P. R. China

3. Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China

4. School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China

5. School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore

Abstract

We report a novel Au-assist exfoliation and non-destructive transfer method to fabricate the large-scale Bi2Se3 thin nanosheet. Furthermore, a broken-gap tunneling phototransistor is designed by combing 2H-MoTe2 and Bi2Se3.

Funder

Natural Science Foundation of Jilin Province

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Guangdong Provincial Pearl River Talents Program

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR04281E

Reference54 articles.