Interface engineering of a hole-transport layer/perovskite with low-band-gap 2D-carbon nitrides for solar cell fabrication-Reference-Cited by-同舟云学术

Interface engineering of a hole-transport layer/perovskite with low-band-gap 2D-carbon nitrides for solar cell fabrication

Published:2023 Issue:3 Volume:7 Page:763-768
ISSN:2398-4902
Container-title:Sustainable Energy & Fuels
language:en
Short-container-title:Sustainable Energy Fuels

Author:

Ashraf Muhammad¹,Hemasiri Naveen Harindu²^ORCID,Kazim Samrana²³^ORCID,Ullah Nisar¹^ORCID,Khan Majad¹,Adewale Ganiyu Saheed¹^ORCID,R. Alhooshani Khalid¹^ORCID,Tahir Muhammad Nawaz¹⁴,Ahmad Shahzada²³^ORCID

Affiliation:

1. Department of Chemistry, King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi Arabia

2. BCMaterials, Basque Center for Materials, Applications and Nanostructures, UPV/EHU Science Park, Leioa, 48940, Spain

3. IKERBASQUE, Basque Foundation for Science, Bilbao, 48009, Spain

4. Interdisciplinary Research Center for Hydrogen and Energy Storage, King Fahd University of Petroleum and & Minerals, Dhahran 31261, Saudi Arabia

Abstract

Carbon nitride-based 2D materials, such as C3N3 and C3N5, and their role as an interlayer in perovskite solar cells to stabilize NiOx hole selectivity are investigated.

Funder

Ministerio de Ciencia e Innovación

H2020 European Research Council

King Fahd University of Petroleum and Minerals

Publisher

Royal Society of Chemistry (RSC)

Subject

Energy Engineering and Power Technology,Fuel Technology,Renewable Energy, Sustainability and the Environment

Link

http://pubs.rsc.org/en/content/articlepdf/2023/SE/D2SE01225A

Reference38 articles.

1. Reduced trap density and mitigating the interfacial losses by placing 2D dichalcogenide material at perovskite/HTM interface in a dopant free perovskite solar cells