Evolution of V-pits in the ammonothermal growth of GaN on HVPE-GaN seeds-Reference-Cited by-同舟云学术

Evolution of V-pits in the ammonothermal growth of GaN on HVPE-GaN seeds

Published:2022 Issue:48 Volume:24 Page:8525-8530
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Li Tengkun¹^ORCID,Ren Guoqiang¹,Su Xujun¹,Xie Kaihe¹,Xia Zhenghui¹,Gao Xiaodong¹,Wang Jianfeng¹²,Xu Ke¹³²

Affiliation:

1. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123, Jiangsu, China

2. Suzhou Nanowin Science and Technology Co, Ltd., Suzhou, 215123, Jiangsu, China

3. Shenyang National Laboratory for Materials Science, Jiangsu Institute of Advanced Semiconductors, NW-20, Nanopolis Suzhou, 99 Jinji Lake Avenue, Suzhou 215123, Jiangsu, China

Abstract

The evolution of pit-type defects in the Am-GaN growth of GaN on HVPE-GaN is investigated in this paper.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Jiangsu Provincial Key Research and Development Program

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CE/D2CE01332K

Reference38 articles.

1. 500 nm electrically driven InGaN based laser diodes

2. Fabrication and performance of GaN electronic devices

3. GaN Substrates for III-Nitride Devices

4. InGaN-based violet laser diodes

5. GaN Power Devices – Current Status and Future Directions

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