A star polymer with a metallo-phthalocyanine core as a tunable charge storage material for nonvolatile transistor memory devices-Reference-Cited by-同舟云学术

A star polymer with a metallo-phthalocyanine core as a tunable charge storage material for nonvolatile transistor memory devices

Published:2018 Issue:11 Volume:6 Page:2724-2732
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Aimi Junko¹²³⁴⁵^ORCID,Wang Po-Hung⁶⁷⁸⁹,Shih Chien-Chung⁶¹⁰¹¹⁹,Huang Chih-Feng⁶⁷⁸⁹^ORCID,Nakanishi Takashi¹²¹³¹⁴⁵^ORCID,Takeuchi Masayuki¹²³⁴⁵^ORCID,Hsueh Han-Yu¹⁵⁷⁸⁹,Chen Wen-Chang⁶¹⁰¹¹⁹^ORCID

Affiliation:

1. Molecular Design & Function Group

2. National Institute for Materials Science (NIMS)

3. 1-2-1 Sengen

4. Tsukuba

5. Japan

6. Department of Chemical Engineering

7. National Chung Hsing University

8. Taichung 40227

9. Taiwan

10. National Taiwan University

11. Taipei 10617

12. International Center for Materials Nanoarchitectonics (MANA)

13. NIMS, 1-1 Namiki

14. Tsukuba 305-0044

15. Department of Materials Science and Engineering

Abstract

A novel strategy to control the OFET memory device performance has been demonstrated using a metallophthalocyanine-cored star-shaped polystyrene as a charge storage material.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C7TC05790C

Reference34 articles.

1. Polymer electronic memories: Materials, devices and mechanisms

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3. Conjugated Polymer Nanoparticles as Nano Floating Gate Electrets for High Performance Nonvolatile Organic Transistor Memory Devices

4. Towards the Development of Flexible Non-Volatile Memories

5. Layer-by-Layer-Assembled Reduced Graphene Oxide/Gold Nanoparticle Hybrid Double-Floating-Gate Structure for Low-Voltage Flexible Flash Memory

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