Influence of Mo doping on interfacial charge carrier dynamics in photoelectrochemical water oxidation on BiVO<sub>4</sub>-Reference-Cited by-同舟云学术

Influence of Mo doping on interfacial charge carrier dynamics in photoelectrochemical water oxidation on BiVO₄

Published:2023 Issue:12 Volume:7 Page:2923-2933
ISSN:2398-4902
Container-title:Sustainable Energy & Fuels
language:en
Short-container-title:Sustainable Energy Fuels

Author:

Wu Xiaofeng¹^ORCID,Oropeza Freddy E.²^ORCID,Qi Zheng³,Einert Marcus¹^ORCID,Tian Chuanmu¹^ORCID,Maheu Clément¹^ORCID,Lv Kangle³^ORCID,Hofmann Jan P.¹^ORCID

Affiliation:

1. Surface Science Laboratory, Department of Materials and Earth Sciences, Technical University of Darmstadt, Otto-Berndt-Strasse 3, 64287 Darmstadt, Germany

2. Photoactivated Processes Unit, IMDEA Energy Institute, Parque Tecnológico de Móstoles, Avda. Ramón de la Sagra 3, 28935 Móstoles, Madrid, Spain

3. Laboratory of Catalysis and Materials Science of the State Ethnic Affairs Commission & Ministry of Education, College of Resources and Environment, South-Central Minzu University, Wuhan 430074, China

Abstract

Intensity of photocurrent during water oxidation in BiVO4 is predominantly limited by charge transfer resistance (Rct), rather than semiconductor bulk resistance (Rbulk). Mo doping of BiVO4 can slightly reduce Rbulk but obviously decreases Rct.

Funder

Deutsche Forschungsgemeinschaft

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Energy Engineering and Power Technology,Fuel Technology,Renewable Energy, Sustainability and the Environment

Link

http://pubs.rsc.org/en/content/articlepdf/2023/SE/D3SE00061C

Reference46 articles.

1. Advanced Catalysts for Photoelectrochemical Water Splitting

2. Rate Law Analysis of Water Oxidation on a Hematite Surface