Synergistic effects of charge transport engineering and passivation enabling efficient inverted perovskite quantum-dot light-emitting diodes-Reference-Cited by-同舟云学术

Synergistic effects of charge transport engineering and passivation enabling efficient inverted perovskite quantum-dot light-emitting diodes

Published:2020 Issue:16 Volume:8 Page:5572-5579
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Pan Jiangyong¹²³⁴⁵,Fang Fan⁵⁶⁷⁸⁴,Xie Jing⁹¹⁰¹¹¹²,Wang Lixi⁵⁶⁷⁸⁴,Chen Jing⁵⁶⁷⁸⁴^ORCID,Chang Jianhua¹²³⁴,Lei Wei⁵⁶⁷⁸⁴,Zhang Wei¹³¹⁴¹⁵⁴,Zhao Dewei¹⁶¹⁷¹⁸¹⁹⁴^ORCID

Affiliation:

1. School of Electronic and Information Engineering

2. Nanjing University of Information Science & Technology

3. Nanjing 210044

4. P. R. China

5. Joint International Research Laboratory of Information Display and Visualization

6. School of Electronic Science and Engineering

7. Southeast University

8. Nanjing

9. Department of Materials Science and Engineering

10. University of Florida

11. Gainesville

12. USA

13. Shenzhen China Star Optoelectronics Semiconductor

14. Display Technology Co., Ltd.

15. Shenzhen 518132

16. Institute of Solar Energy Materials and Devices

17. College of Materials Science and Engineering

18. Sichuan University

19. Chengdu 610065

Abstract

A synergistic engineering strategy of improved charge transport and facile post-passivation enhances the performance of inverted perovskite QD light-emitting diodes.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

National Basic Research Program of China

Priority Academic Program Development of Jiangsu Higher Education Institutions

Fundamental Research Funds for the Central Universities

Graduate Research and Innovation Projects of Jiangsu Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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